? 2017 ixys corporation, all rights reserved. v ces = 2500v i c110 = 16a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 4.0v t fi(typ) = 250ns ds100794a(5/17) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 2500 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 ? a v ce = 0.8 ? v ces , v ge = 0v t j = 150 ? c 4 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 16a, v ge = 15v, note 1 3.30 4.00 v t j = 150 ? c 4.75 v symbol test conditions maximum ratings v ces t j = 25c to 175c 2500 v v cgr t j = 25c to 175c, r ge = 1m ? 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 38 a i c110 t c = 110c 16 a i f110 t c = 110c 14 a i cm t c = 25c, 1ms 126 a ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 64 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 500 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g high voltage xpt tm igbt w/ diode advance technical information features ? high voltage package ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches IXYH16N250CV1HV to-247hv (ixyh) c (tab) g e c g = gate c = collector e = emitter tab = collector
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N250CV1HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 5.0 v t j = 150c 4.8 v i rm 28 a t rr 165 ns r thjc 0.80 c/w i f = 16a, v ge = 0v, -di f /dt = 500a/ s, v r = 1200v, t j = 150c i f = 16a,v ge = 0v, note 1 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 16a, v ce = 10v, note 1 11 18 s r gi gate input resistance 5.8 ? c ie s 1980 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 94 pf c res 28 pf q g(on) 97 nc q ge i c = 16a, v ge = 15v, v ce = 0.5 ? v ces 13 nc q gc 43 nc t d(on) 14 ns t ri 19 ns e on 4.75 mj t d(off) 260 ns t fi 250 ns e of f 3.90 mj t d(on) 15 ns t ri 24 ns e on 5.80 mj t d(off) 305 ns t fi 236 ns e off 4.40 mj r thjc 0.30 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 16a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 16a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 to-247hv outline pins: 1 - gate 2 - emitter 3, 4 - collector e r a q s a3 e d c b a1 l1 d3 d1 d2 e2 e3 3x 2x 4x 3x a2 b1 0p e1 0p1 4 3 1 2 e1 l
? 2017 ixys corporation, all rights reserved. IXYH16N250CV1HV fig. 1. output characteristics @ t j = 25 o c 0 4 8 12 16 20 24 28 32 00.511.522.533.544.555.56 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 5v 7v 6v fig. 2. extended output characteristics @ t j = 25 o c 0 50 100 150 200 250 0 4 8 1216202428 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150 o c 0 4 8 12 16 20 24 28 32 012345678 v ce - volts i c - amperes 8v v ge = 15v 12v 10v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 16a i c = 8a i c = 32a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 32a t j = 25 o c 16a 8a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 3456789 v ge - volts i c - amperes t j = 150 o c 25 o c - 40 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N250CV1HV fig. 7. transconductance 0 5 10 15 20 25 30 35 0 1020304050607080 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v ge - volts v ce = 1250v i c = 16a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2017 ixys corporation, all rights reserved. IXYH16N250CV1HV fig. 16. inductive turn-off switching times vs. collector current 50 100 150 200 250 300 350 400 8 121620242832 i c - amperes t f i - nanoseconds 160 200 240 280 320 360 400 440 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 17. inductiv e turn-off switching times v s. junction temperature 100 150 200 250 300 350 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 200 240 280 320 360 400 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 1250v i c = 32a i c = 16a fig. 12. inductive switching energy loss vs. gate resistance 2 4 6 8 10 12 14 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0 4 8 12 16 20 24 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 1250v i c = 16a i c = 32a fig. 15. inductive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 200 300 400 500 600 700 800 900 1000 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 1250v i c = 32a i c = 16a fig. 13. inductive switching energy loss vs. collector current 0 2 4 6 8 10 12 8 121620242832 i c - amperes e off - millijoules 2 4 6 8 10 12 14 e on - millijoules e off e on r g = 10 ? ????? v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 2 4 6 8 10 12 14 16 e on - millijoules e off e on r g = 10 ? ???? v ge = 15v v ce = 1250v i c = 16a i c = 32a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH16N250CV1HV fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 8 121620242832 i c - amperes t r i - nanoseconds 10 12 14 16 18 20 22 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 1250v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 10 12 14 16 18 20 22 24 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 1250v i c = 32a i c = 16a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 1250v i c = 16a i c = 32a ixys ref: ixy_16n250cv1hv(5p-at628) 4-05-17-a
? 2017 ixys corporation, all rights reserved. IXYH16N250CV1HV fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.80 0.85 0.90 0.95 1.00 1.05 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 1200v i f = 16a -dif /dt = 500a/ s fig. 26. maximum transient thermal impedance (diode) 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - k / w fig. 21. diode forward characteristics 0 10 20 30 40 50 60 70 0123456789101112 v f (v) i f (a) t j = 25oc t j = 150oc fig. 22. reverse recovery charge vs. -di f /dt 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 200 400 600 800 1000 1200 1400 1600 1800 -di f / dt (a/ s) q rr ( c) i f = 32a 8a 16a t j = 150oc v r = 1200v fig. 23 reverse recovery current vs. -di f /dt 10 15 20 25 30 35 40 45 50 55 200 400 600 800 1000 1200 1400 1600 1800 di f /dt (a/ s) i rr (a) t j = 150oc v r = 1200v i f = 32a 16a 8a f i g. 24. reverse recovery time vs. -di f /dt 100 120 140 160 180 200 220 240 200 400 600 800 1000 1200 1400 1600 1800 -di f /dt (a/ s) t rr (ns) t j = 150oc v r = 1200v 8a 16a 32a
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